1N645 Datasheet | NTE Electronics

Description : The 1N645 is a general purpose silicon rectifier in a DO- 35 case designed for use in power applications, or for clipping and steering applications. Maximum Ratings and Electrical Characteristics: Power Dissipation (3/8” from body TL = +75C), Ptot - - - - - - . . 600m W Average Rectified Forward Current (TL = +75C), IAV - - - - - - . . . 400m A Reverse Voltage, VR - - - - - - - - - - - - . . . 225V Min. Breakdown Voltage (at 100A), BV - - - - - - - - - . 275V Maximum Average Rectified Current, IO TA = +25C - - - - - - - - - - - - . . . 400m A TA = +150C . . . ....