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2N6287 - Silicon PNP Darlington Transistor

General Description

The 2N6287 is silicon PNP Darlington transistor in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Key Features

  • D High DC Current Gain @ IC = 10A: hFE = 4000 Typ (NTE252) D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number 2N6287
Manufacturer NTE Electronics (defunct)
File Size 60.05 KB
Description Silicon PNP Darlington Transistor
Datasheet download datasheet 2N6287 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6287 Silicon PNP Darlington Transistor Power Amplifier Description: The 2N6287 is silicon PNP Darlington transistor in a TO3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 4000 Typ (NTE252) D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .