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2N6294 - Silicon NPN Transistor

General Description

The 2N6294 silicon NPN Darlington transistor is a TO 66 type case designed for general purpose amplifier, low

frequency switching and hammer driver applications.

Key Features

  • D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number 2N6294
Manufacturer NTE Electronics (defunct)
File Size 60.70 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N6294 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .