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BDV64 - Silicon PNP Transistors

General Description

The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO

3PN type package designed for general purpose amplifier and low speed switching applications.

Key Features

  • D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number BDV64
Manufacturer NTE Electronics (defunct)
File Size 61.95 KB
Description Silicon PNP Transistors
Datasheet download datasheet BDV64 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
BDV65 Silicon NPN Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BDV64 (PNP) & BDV65 (NPN) Silicon Complementary Transistors Darlington Power Amp, Switch TO−3PN Type Package Description: The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO−3PN type package designed for general purpose amplifier and low speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .