MJ10012 - NPN Silicon Power Darlington Transistor

Product Overview

NTE

MJ10012 NPN Silicon Power Darlington Transistor by NTE - Datasheet Preview — Datasheet preview – MJ10012

Datasheet Details

Part number	MJ10012
Manufacturer	NTE
File Size	54.93 KB
Description	NPN Silicon Power Darlington Transistor
Datasheet	MJ10012 Datasheet
Additional preview pages of the MJ10012 datasheet.

Product details

Description

The MJ10012 is high voltage, high current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.

Features

D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 400V Collector.
Emitter Voltage (RBE = 273 ), VCER.
. 550V Collector.
Base Voltage, VCBO.

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Published: Jun 24, 2019 |