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MJ10021 - NPN Silicon Power Darlington Transistor

General Description

The MJ10012 is high voltage, high

current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.

Key Features

  • D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 400V Collector.
  • Emitter Voltage (RBE = 273 ), VCER.
  • . 550V Collector.
  • Base Voltage, VCBO.

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Datasheet Details

Part number MJ10021
Manufacturer NTE Electronics (defunct)
File Size 54.93 KB
Description NPN Silicon Power Darlington Transistor
Datasheet download datasheet MJ10021 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (RBE = 273 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .