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MJ10012 NPN Silicon Power Darlington Transistor
TO3 Type Package
Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (RBE = 273 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .