• Part: NTE102A
  • Description: Germanium Complementary Transistors
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 48.01 KB
Download NTE102A Datasheet PDF
NTE Electronics
NTE102A
NTE102A is Germanium Complementary Transistors manufactured by NTE Electronics.
Description : The NTE102A (PNP) and NTE103A (NPN) are Germanium plementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 32V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . 10V Collector Current, IC - - - - - - - - - - - - - 1A Power Dissipation, PC - - - - - - - - - - - . . . 650m W Operating Junction Temperature, TJ - - - - - - - - - . . . +90°C Storage Temperature Range, Tstg - - - - - - - - . . . - 55° to +90°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector- Base Voltage Collector Cutoff Current DC Current Gain mon- Emitter Cutoff Frequency Collector- Emitter Saturation Voltage Noise Figure Symbol VCBO ICBO h FE1 h FE2 fα e VCE(sat) NF Test Conditions IC = 200µA, IE = 0 VCB = 10V, IE = 0 VCB = 0, IE = 50m A VCB = 0, IE = 300m A VCB = 2V, IE = 10m A IC = 500m A, IB = 50m A VCB = 5V, IE = 5m A, f = 1k Hz Min 32 - 63 69 10 - -...