NTE108 Datasheet | NTE Electronics

Description : The NTE108 is a silicon NPN transistor in a TO92 type case designed for low- noise, high- frequency amplifiers, 1GHz local oscillatore, non- neutralized IF amplifiers, and non- saturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 15V Collector- Base Voltage, VCBO - - - - - - - - - - - 30V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 3V Continuous Collector Current, IC - - - - - - - - - - . 50m A Total Device Dissipation (TA = +25°C), PD - - - - - - - - . 625m W Derate Above 25°C - - - - - - - - - - . . . . 12m W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 55° to +150°C Storage Temperature Range, Tstg - - - - -...