NTE109
NTE109 is Germanium Diode manufactured by NTE Electronics.
Description
: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance- high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications. Absolute Maximum Ratings: (TA = +25°C unles otherwise specified) Continuous Inverse Operating Voltage (Note 1), Vcont
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- 80V Continuous Average Forward Current, IF
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- - . . . . 60m A Peak Recurrent Forward Current (Note 2)
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- - . . 325m A Forward Surge Current (1 sec), IFSM
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- . 500m A Electrical Characteristics: Peak Reverse Voltage, PRV
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- . . 100V Forward Voltage Drop (IF = 200m A), VF
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- . 1.0V Maximum Reverse Leakage (VR = 50V), IR
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- - . . 100µA Additional Specifications: Ambient Temperature Range, TA
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- 78° to +90°C Absolute Maximum Storage Temperature Range, Tstg
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