• Part: NTE109
  • Description: Germanium Diode
  • Category: Diode
  • Manufacturer: NTE Electronics
  • Size: 18.87 KB
Download NTE109 Datasheet PDF
NTE Electronics
NTE109
NTE109 is Germanium Diode manufactured by NTE Electronics.
Description : The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance- high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications. Absolute Maximum Ratings: (TA = +25°C unles otherwise specified) Continuous Inverse Operating Voltage (Note 1), Vcont - - - - - - - 80V Continuous Average Forward Current, IF - - - - - - - - . . . . 60m A Peak Recurrent Forward Current (Note 2) - - - - - - - - . . 325m A Forward Surge Current (1 sec), IFSM - - - - - - - - - . 500m A Electrical Characteristics: Peak Reverse Voltage, PRV - - - - - - - - - - - . . 100V Forward Voltage Drop (IF = 200m A), VF - - - - - - - - - . 1.0V Maximum Reverse Leakage (VR = 50V), IR - - - - - - - - . . 100µA Additional Specifications: Ambient Temperature Range, TA - - - - - - - - . . . . - 78° to +90°C Absolute Maximum Storage Temperature Range, Tstg -...