NTE1112 Datasheet | NTE Electronics

Description : The NTE1112 is an integrated monolithic circuit in a 14- lead DIP plastic package with external heat- sink. Features : D Output Power 2.2W (18V- 16Ω) D Low Quiescent Output Current D High Efficiency Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCC - - - - - - - - - - - - . . . . 27V Input Voltage (Note 1), Vi - - - - - - - - - - . . . 0.5V to 27V Output Peak Current, IO - - - - - - - - - - - - . . 1A Power Dissipation (Tamb = 25°C), PD - - - - - - - - - . . . 1.35W Storage and Junction Temperature Range, Tstg - - - - - - . - 55 to +150°C Thermal Resistance Junction- Case, Rth j- case - - - - - - - . . . 17°C/W Thermal Resistance Junction- Ambient, Rth j- amb - - - - - - - 93°C/W Note 1. For V < 27V, Vimax = Vs Electrical Characteristics: (Tamb = +25°C unless otherwise specified) Parameter Total Quiescent Drain Current Quiescent Drain Current of Output Transistors Drain Current Input Bias Current Output Power Symbol Id Id Id Ib PO Vs = 12V Vs = 18V Vs = 12V Vs = 18V d = 10% Vs = 18V d = 3% Vs = 12V, RL = 8Ω Vs = 18V, RL = 16Ω Vs = 24V, RL = 50Ω d = 10% Internal Feedback Resistance RF Vs = 12V, RL = 8Ω Vs = 18V, RL = 16Ω RL = 16Ω, PO = 2.2W, VS = 18V Test Conditions Min - - - -...