NTE112 Datasheet | NTE Electronics

Description : The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM - - - - - - - - - . . . 5V Forward Continuous Current (TA = +25°C, Note 1), IF - - - - - - . . . 30m A Surge Non- Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM - - - - - . 60m A Operating Junction Temperature, TJ - - - - - - - - - . . +125°C Storage Temperature Range, Tstg - - - - - - - - . . . - 65° to +150° Thermal Resistance, Junction- to- Ambient (Note 1), Rth (j- a) - - - - . . . . 400°C/W Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL - - +230°C Note 1. On infinite heatsink with 4mm lead length. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Static Characteristics Breakdown Voltage Forward Voltage Drop Reverse Current Dynamic Characteristics Capacitance Stored Charge Frequency C QS F VR = 0V, f = 1MHz IF = 10m A, Note 3 f = 1GHz, Note 4 - - - - - 6 1 3 7 p F p C d B V(BR) VF IR IR = 100µA IF = 10m A, Note 2 VR = 1V, Note 2 5 - - - - - - 0.55 0.05 V V µA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle < 2%. Note 3. Measured on a B- line Electronics QS- 3 stored charge meter. Note 4. Noise Figure Test: - Diode is inserted in a tuned stripline circuit. Local oscillator frequency 1GHz Local oscillator power 1m W Intermediate frequency amplifier, tuned on 30MHz, has a noise figure, 1.5d B. 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max .090 (2.28) Dia Max Color Band Denotes...