NTE1177 Datasheet | NTE Electronics

Description : The NTE1177 is a monolithic silicon integrated circuit in a 14- Lead DIP type package that performs the luminance processing functions of amplification; contrast, brightness and peaking control; blanking; and black- level clamping. Features : D Black- Level Clamping D Linear DC Controls for Brightness, Contrast, and Peaking D Horizontal and Vertical Blanking D Operates with Standard or Tapped Delay Line Absolute Maximum Ratings; DC Supply Current (Into Pin13, Note 1), VCC - - - - - - - . . . . 59.5m A Device Dissipation (Up to TA = +55°C, Note 1), PD - - - - - - . . . . 750m W Derate Above 55°C - - - - - - - - - - . . 7.9m W/°C Operating Ambient Temperature Range, Topr - - - - - - . . . . - 40° to +85°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL - - - . . +265°C Note 1. Although the NTE1177 is rated for maximum dissipation of 750m W, it is remended that the current into Pin13 be limited by external circuit resistance to 39m A for a typical voltage at Pin13 of 11.8V. Electrical Characteristics: (TA = +25°C unless otherwise specified) Test Conditions Switch Numbers S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 Switch Positions For Characteristic Measurements Parameter Symbol Static Characteristics (Bias Voltage = 6.1V) Voltage at Pin13 Quiescent Voltage V13 V4 V7 Current Into Pin13 Pin13 Connected to +11V I13 2 2 2 2 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 4 3 2 3 1 1 1 1 2 2 2 2 2 2 2 2 1 1 1 1 1 1 1 2 Min 11.0 3.3 7.1 10 Typ Max Unit V V V m A 11.8 13.2 4.0 7.7 19 5.7 8.3 30 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Test Conditions Switch...