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NTE123A - Silicon Complementary Transistors

Description

The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium

speed switching and amplifiers from audio to VHF frequencies.

Features

  • D Low Collector Saturation Voltage: 1V (Max) D High Current Gain.
  • Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO NTE123A.
  • . . 40V NTE159M.
  • . . 60V Collector.
  • Base Voltage, VCBO NTE123A.

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Datasheet Details

Part number NTE123A
Manufacturer NTE Electronics (defunct)
File Size 33.10 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE123A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: D Low Collector Saturation Voltage: 1V (Max) D High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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