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NTE130 - Silicon Power Transistor

Description

The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features

  • D DC Current Gain: hFE = 20.
  • 70 @ IC = 4A D Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Emitter Voltage, VCER.
  • . . . . 70V Collector.
  • Base Vol.

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Datasheet Details

Part number NTE130
Manufacturer NTE
File Size 24.88 KB
Description Silicon Power Transistor
Datasheet download datasheet NTE130 Datasheet
Additional preview pages of the NTE130 datasheet.

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Full PDF Text Transcription

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NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 – 70 @ IC = 4A D Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . .
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