NTE16003 Datasheet | NTE Electronics

Description : The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF- UHF region. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 65V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 40V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Continuous Collector Current, IC (max) - - - - - - - - - . . 1.5A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . 11.6W Derate Above 25°C - - - - - - - - - - . . 66.4m W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 65° to +200°C Storage Temperature Range, Tstg - - - - -...