Datasheet4U Logo Datasheet4U.com

NTE16003 - Silicon NPN Transistor

Description

The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design.

📥 Download Datasheet

Datasheet preview – NTE16003

Datasheet Details

Part number NTE16003
Manufacturer NTE
File Size 22.55 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE16003 Datasheet
Additional preview pages of the NTE16003 datasheet.

📁 Similar Datasheet

  • NTE1661 - Integrated Circuit Synchronization Signal Processor (NTE Electronics)
  • NTE1671 - 42-Lead DIP / Video Chroma Demod (ETC)
  • NTE1012 - Integrated Circuit Module - Hybrid (NTE Electronics)
  • NTE1026 - Integrated Circuit Module (NTE Electronics)
  • NTE1039 - Integrated Circuit FM IF Amplifier (NTE Electronics)
  • NTE1052 - Integrated Circuit Low Noise Preamp (NTE Electronics)
  • NTE1053 - Integrated Circuit AF High Gain Preamplifier (NTE Electronics)
  • NTE1056 - Integrated Circuit FM Stereo Multiplex Demodulator (NTE Electronics)
  • NTE1057 - Integrated Circuit FM IF Amplifier (NTE Electronics)
  • NTE1058 - Integrated Circuit Audio Power Amp (NTE Electronics)
Other Datasheets by NTE
  • NTE16000-ECG - Polymeric Positive Temperature Coefficient (PTC)
  • NTE16001 - Silicon NPN Transistor Video IF Amp
  • NTE16002 - Silicon NPN Transistor
  • NTE16004 - Silicon Complementary Transistors
  • NTE16005 - Silicon Complementary Transistors
  • NTE16006 - Silicon NPN Transistor
  • NTE160 - Germanium PNP Transistor RF-IF Amp / FM Mixer OSC
  • NTE16022-ECG - Polymeric Positive Temperature Coefficient (PTC)

Full PDF Text Transcription

Click to expand full text
NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |