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NTE16003 - Silicon NPN Transistor

General Description

The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design.

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Datasheet Details

Part number NTE16003
Manufacturer NTE Electronics (defunct)
File Size 22.55 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE16003 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .