NTE175 Datasheet | NTE Electronics

Description : The NTE38 (PNP) and NTE175 (NPN) plementary silicon transistors are designed for high- speed switching and linear amplifier applications for high- voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features : D Collector- Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200m A NTE175: VCEO(sus) = 300V @ IC = 200m A D Second Breakdown Collector Current: NTE38 IS/b = 875m A @ VCE = 40V NTE175 IS/b = 350m A @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO NTE38 - - - - - - - - - - - - - . . . . 350V NTE175 - - - - - - - - - - - - - . . . 300V Collector- Base Voltage, VCB NTE38 - - - - - - - - - - - - - . . . . 400V NTE175 - - - - - - - - - - - - - . . . 500V Emitter- Base Voltage, VEB - - - - - - - - - - - . . 6Vdc Collector Current, IC Continuous - - - - -...