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NTE182 - Silicon Complementary Transistors

Description

The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications.

Features

  • D DC Current Gain Specified to 10A D High Current Gain.
  • Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Base Voltage, VCB.
  • . . 70V Emitter.
  • Base Voltage, VEB.

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Datasheet Details

Part number NTE182
Manufacturer NTE Electronics (defunct)
File Size 22.93 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE182 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 10A D High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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