NTE188
NTE188 is Silicon Complementary Transistors manufactured by NTE Electronics.
Description
: The NTE188 (NPN) and NTE189 (PNP) are plementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features
: D High Collector- Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1m A D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO
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- - . . . . 80V Collector- Base Voiltage, VCB
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- . 80V Emitter- Base Voltage, VEB
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- . . . . 4V Continuous Collector Current, IC
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- - . . . . 2A Total Power Dissipation (TA = +25°C), PD
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- . 1W Derate Above 25°C
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- 8m W/°C Total Power Dissipation (TC = +25°C), PD
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- - . . . . 10W Derate Above...
