NTE190
NTE190 is Silicon NPN Transistor High Voltage Amplifier manufactured by NTE Electronics.
Description
: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features
: D High Collector- Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1m A D Low Collector- Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200m A D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO
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- - . . . 180V Collector- Base Voltage, VCB
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- . 180V Emitter- Base Voltage, VEB
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- . . . . 5V Collector Current, IC
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- 1A Total Device Dissipation (TA = +25°C), PD
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- 1W Derate Above 25°C
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- 8m W/°C Total Device Dissipation (TC = +25°C), PD
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