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NTE190 - Silicon NPN Transistor High Voltage Amplifier

Description

The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators.

Features

  • D High Collector.
  • Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector.
  • Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 180V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number NTE190
Manufacturer NTE
File Size 22.71 KB
Description Silicon NPN Transistor High Voltage Amplifier
Datasheet download datasheet NTE190 Datasheet
Additional preview pages of the NTE190 datasheet.

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Full PDF Text Transcription

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NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter–Base Voltage, VEB .
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