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NTE191 - Silicon Complementary Transistors

Description

The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high

voltage video and luminance output stages in TV receivers.

Features

  • D High Collector.
  • Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector.
  • Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 300V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number NTE191
Manufacturer NTE Electronics (defunct)
File Size 23.92 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE191 Datasheet

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Full PDF Text Transcription

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NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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