NTE195A
NTE195A is Silicon NPN Transistor RF Power Amp/Driver manufactured by NTE Electronics.
Description
: The NTE195A is designed primarily for use in large- signal output amplifier stages. Intended for use in Citizen- Band munications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up- modulation in AM circuits. Features
: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10d B Efficiency = 70% Typical Absolute Maximum Ratings: Collector- Emitter Voltage, VCER
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- - . . . 70V Collector- Base Voltage, VCBO
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- 70V Emitter- Base Voltage, VEBO
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- 3.0V Collector Current- Continuous, IC
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- - . 1.5A Total Device Dissipation (TC = +25°C), PD
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- - . . . . 8W Derate above 25°C
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- - . . 28.6m W/°C Storage Temperature Range, Tstg
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- 65° to +200°C Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter OFF Characteristics Collector- Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Capacitance Cob VCB = 12.5V, IE = 0, f =...