• Part: NTE195A
  • Description: Silicon NPN Transistor RF Power Amp/Driver
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 23.99 KB
Download NTE195A Datasheet PDF
NTE Electronics
NTE195A
NTE195A is Silicon NPN Transistor RF Power Amp/Driver manufactured by NTE Electronics.
Description : The NTE195A is designed primarily for use in large- signal output amplifier stages. Intended for use in Citizen- Band munications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up- modulation in AM circuits. Features : D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10d B Efficiency = 70% Typical Absolute Maximum Ratings: Collector- Emitter Voltage, VCER - - - - - - - - - - . . . 70V Collector- Base Voltage, VCBO - - - - - - - - - - - 70V Emitter- Base Voltage, VEBO - - - - - - - - - - - 3.0V Collector Current- Continuous, IC - - - - - - - - - - . 1.5A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . . 8W Derate above 25°C - - - - - - - - - - . . 28.6m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +200°C Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter OFF Characteristics Collector- Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Capacitance Cob VCB = 12.5V, IE = 0, f =...