NTE2102 Description
The NTE2101 is a high speed 1024 x 1 bit static random access read/write memory in a 16 Lead DIP type package designed using N Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N Channel technology allows plete DTL/TTL patibility of all inputs and outputs as well as a single 5V supply.
NTE2102 Key Features
- No Clocks or Refresh D All Inputs Protected Against Static Charge D 350ns Access Time