Datasheet Details
| Part number | NTE2102 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 28.73 KB |
| Description | Integrated Circuit NMOS / 1K Static RAM |
| Datasheet | NTE2102_NTEElectronics.pdf |
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Overview: NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns.
| Part number | NTE2102 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 28.73 KB |
| Description | Integrated Circuit NMOS / 1K Static RAM |
| Datasheet | NTE2102_NTEElectronics.pdf |
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: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology.
Static storage cells eliminate the need for clock or refresh circuitry.
Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs and outputs as well as a single 5V supply.
| Part Number | Description |
|---|---|
| NTE210 | Silicon Complementary Transistors |
| NTE21 | Silicon Complementary Transistors |
| NTE211 | Silicon Complementary Transistors |
| NTE21128 | Integrated Circuit NMOS / 128K (16K x 8) UV EPROM |
| NTE2114 | Integrated Circuit MOS / Static 4K RAM |
| NTE21256 | 262 /144-Bit Dynamic Random Access Memory (DRAM) |
| NTE213 | Germanium PNP Transistor |
| NTE214 | Silicon NPN Transistor |
| NTE2147 | 4K Static Random Access Memory |
| NTE215 | Silicon NPN Transistor |