NTE2102 Overview
Key Specifications
Package: DIP
Mount Type: Through Hole
Pins: 16
Operating Voltage: 5 V
Description
The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry.
Key Features
- 0.5V to +7V Power Dissipation, PD
- 1W Storage Temperature Range, Tstg
- 65° to +150°C Lead Temperature (During Soldering, 10sec), TL
