Datasheet Summary
NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns
Description: The NTE2101 is a high- speed 1024 x 1 bit static random access read/write memory in a 16- Lead DIP type package designed using N- Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N- Channel technology allows plete DTL/TTL patibility of all inputs and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output allows easy memory expansion by OR- tying individual devices to a data bus. Data in and data out have the same polarity. Features
: D Single 5V Supply D All Inputs and Outputs...