NTE2147 Description
The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative design approach which provides the ease−of−use.
NTE2147 Key Features
- deselecting the NTE2147
- the part automatically reduces its power requirements and remains in this lower power standby mode as long as CS remains