NTE2147 Overview
Key Specifications
Package: DIP
Pins: 18
Operating Voltage: 5 V
Max Voltage (typical range): 5.5 V
Description
The NTE2147 is a 4096-bit static Random Access Memory (SRAM) in an 18-Lead DIP type package organized as 4096 words by 1-bit. Using a scaled NMOS technology, it incorporates an innovative design approach which provides the ease-of-use features associated with non-clocked static memories and the reduced standby power dissipation associated with clocked static memories.
Key Features
- associated with non-clocked static memories and the reduced standby power dissipation associated with clocked static memories
- The result is low standby power dissipation without the need for clocks, address setup, and hold times
- In addition, data rates are not reduced due to cycle times that are longer than access times
- CS controls the power down feature
- This device feature results in system power savings as great as 85% in larger systems, where the majo
