| Part number | NTE2147 |
|---|---|
| Datasheet | NTE2147-NTE.pdf |
| File Size | 64.30 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | 4K Static Random Access Memory |
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The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative design approach which provides the ease−of−use.
See all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
| NTE214 | Silicon NPN Transistor |
| NTE21 | Silicon Complementary Transistors |
| NTE210 | Silicon Complementary Transistors |
| NTE2102 | Integrated Circuit NMOS / 1K Static RAM |
| NTE211 | Silicon Complementary Transistors |
| NTE21128 | Integrated Circuit NMOS / 128K (16K x 8) UV EPROM |
| NTE2114 | Integrated Circuit MOS / Static 4K RAM |
| NTE21256 | 262 /144-Bit Dynamic Random Access Memory (DRAM) |
| NTE213 | Germanium PNP Transistor |
| NTE215 | Silicon NPN Transistor |
