Datasheet4U Logo Datasheet4U.com

NTE2306 - Silicon Complementary Transistors

Download the NTE2306 datasheet PDF. This datasheet also covers the NTE2305 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

Features

  • D High Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 160V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2305_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2306
Manufacturer NTE Electronics (defunct)
File Size 23.70 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2306 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE2393 N-Channel MOSFET INCHANGE
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE230 Silicon Controlled Rectifier
NTE2300 Silicon NPN Transistor
NTE2301 Silicon NPN Transistor
NTE2302 Silicon NPN Transistor
NTE2303 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |