NTE2319 Datasheet | NTE Electronics

Description : The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line- operated switchmode applications. Features : D Fast Turn- On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse- Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: D Switching Regulators D Inverters D Solenoids D Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 450V Collector- Emitter Voltage, VCEV - - - - - - - - - - . . . 850V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 6V Collector Current, IC Continuous - - - - - - - - - - - - - . 15A Peak (Note 1) - - - - - - - - - - - - . . . . 20A Base Current, IB Continuous - - - - - - - - - - - - - . 10A Peak (Note 1) -...