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NTE2336 - Silicon NPN Transistor

Key Features

  • D 60V Zener Diode Built.
  • In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • . 60 ±10V Collector.
  • Emitter Voltage, VCEO.
  • 60 ±10V.

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Datasheet Details

Part number NTE2336
Manufacturer NTE Electronics (defunct)
File Size 23.22 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE2336 Datasheet

Full PDF Text Transcription for NTE2336 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTE2336. For precise diagrams, and layout, please refer to the original PDF.

NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Brea...

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er Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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