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NTE2345 Datasheet Silicon Complementary Transistors

Manufacturer: NTE Electronics (defunct)

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Datasheet Details

Part number NTE2345
Manufacturer NTE Electronics (defunct)
File Size 25.61 KB
Description Silicon Complementary Transistors
Download NTE2345 Download (PDF)

General Description

: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications..

Overview

NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power.

Key Features

  • D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCBO.
  • . . . . 120V Emitter.
  • Base Voltage, VEBO.

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