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NTE2345 - Silicon Complementary Transistors

Description

The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT

82 type package designed for use in audio output stages and general amplifier and switching applications..

Features

  • D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCBO.
  • . . . . 120V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number NTE2345
Manufacturer NTE
File Size 25.61 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2345 Datasheet
Additional preview pages of the NTE2345 datasheet.

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Full PDF Text Transcription

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NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . .
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