Datasheet4U Logo Datasheet4U.com

NTE2349 Datasheet Silicon Darlington Transistors

Manufacturer: NTE Electronics (defunct)

Datasheet Details

Part number NTE2349
Manufacturer NTE Electronics (defunct)
File Size 26.78 KB
Description Silicon Darlington Transistors
Download NTE2349 Download (PDF)

General Description

: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Overview

NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General.

Key Features

  • D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCB.