NTE2349 Datasheet | NTE Electronics

Description : The NTE2349 (NPN) and NTE2350 (PNP) are silicon plementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features : D High DC Current Gain: h FE = 1000 (Min) @ IC = 25A h FE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built- In Base- Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 120V Collector- Base Voltage, VCB - - - - - - - - - - - 120V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 5V Collector Current, IC Continuous - - - - - - - - - - - - - . 50A Peak - - - - - - - - - - - - - - 100A Continuous Base Current, IB - - - - - - - - - - - . . . 2A Total Power Dissipation (TC = +25°C),...