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NTE2350 - Silicon Darlington Transistors

Download the NTE2350 datasheet PDF (NTE2349 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon darlington transistors.

Description

The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features

  • D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2349_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2350
Manufacturer NTE Electronics (defunct)
File Size 26.78 KB
Description Silicon Darlington Transistors
Datasheet download datasheet NTE2350 Datasheet

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Full PDF Text Transcription

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NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |