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NTE2362 - Silicon Complementary Transistors

Download the NTE2362 datasheet PDF. This datasheet also covers the NTE2361 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general

purpose amplifier and high speed switching applications.

The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

Features

  • D Very Small.
  • Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • 60V Collector.
  • Emitter Voltage, VCEO.
  • . . . . 50V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2361_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2362
Manufacturer NTE Electronics (defunct)
File Size 22.68 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2362 Datasheet

📁 Similar Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE236 Silicon NPN Transistor
NTE2360 Silicon Complementary Transistors
NTE2361 Silicon Complementary Transistors
NTE2363 Silicon Complementary Transistors
NTE2364 Silicon Complementary Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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