NTE2376
NTE2376 is N-CHANNEL MOSFET manufactured by NTE Electronics.
Features
: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C
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- . 30A TC = +100°C
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- 19A Pulsed Drain Current (Note 1), IDM
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- - 120A Power Dissipation (TC = +25°C), PD
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- . . . 190W Derate Linearly Above 25°C
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- . . 1.5W/°C Gate- to- Source Voltage, VGS
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- - . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS
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- . . . . 410m J Avalanche Current (Note 1),...
