Description
The NTE2390 is an N
Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.
Features
- D Silicon Gate for Fast Switching Speeds
D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged.
- SOA is Power Dissipation Limited
D Source.
- to.
- Drain Diode Characterized for Use With Inductive Loads
G
D
Absolute Maximum Ratings:
S
Drain.
- Source Voltage, VDSS.
- . . 60V Drain.
- Gate Voltage (RGS = 1M+ ), VDGR.
NTE2390 Datasheet
