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NTE2390 - N-Channel Enhancement Mode MOSFET

General Description

The NTE2390 is an N

Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Key Features

  • D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged.
  • SOA is Power Dissipation Limited D Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads G D Absolute Maximum Ratings: S Drain.
  • Source Voltage, VDSS.
  • . . 60V Drain.
  • Gate Voltage (RGS = 1M+ ), VDGR.

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Datasheet Details

Part number NTE2390
Manufacturer NTE Electronics (defunct)
File Size 58.62 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NTE2390 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2390 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged − SOA is Power Dissipation Limited D Source−to−Drain Diode Characterized for Use With Inductive Loads G D Absolute Maximum Ratings: S Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . .