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NTE248 - Silicon Complementary Transistors

Download the NTE248 datasheet PDF. This datasheet also covers the NTE247 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE247_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE248
Manufacturer NTE Electronics (defunct)
File Size 26.38 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE248 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE24 Silicon Complementary Transistors
NTE240 Silicon Complementary Transistors
NTE2401 Silicon PNP Transistor
NTE2402 Silicon Complementary Transistors
NTE2403 Silicon Complementary Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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