NTE249 Datasheet | NTE Electronics

Description : The NTE249 (NPN) and NTE250 (PNP) are silicon plementary Darlington transistors in a TO3 type case designed for use as output devices in plementary general purpose amplifier applications. Features : D High DC Current Gain: h FE = 3500 Typ @ IC = 10A D Monolithic Construction with Built- In Base- Emitter Shunt Resistors Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 100V Collector- Base Voltage, VCB - - - - - - - - - - - . 100V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 5V Collector Current, IC - - - - - - - - - - - - . . . . 16A Base Current, IB - - - - - - - - - - - - . . . . 500m A Total Power Dissipation (TC = +25°C), PD - - - - - - - - . . . 150W Derate Above 25°C - - - - - - -...