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NTE25 - Silicon Complementary Transistors

Download the NTE25 datasheet PDF. This datasheet also covers the NTE24 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.

Features

  • D High Collector.
  • Emitter Breakdown Voltage: VCEO = 80V D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • . . . . 100V Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE24_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE25
Manufacturer NTE Electronics (defunct)
File Size 22.26 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE25 Datasheet

📁 Similar Datasheet

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NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics
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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE250 Silicon Complementary Transistors
NTE2501 Silicon Complementary Transistors
NTE2502 Silicon Complementary Transistors
NTE2503 Silicon NPN Transistor
NTE2504 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: D High Collector–Emitter Breakdown Voltage: VCEO = 80V D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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