NTE2506 Datasheet | NTE Electronics

Description : The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high- resolution color graphics monitors. Features : D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: Collector- Base Voltage, VCBO - - - - - - - - - - . . . . 115V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 95V Collector- Emitter Voltage (RBE = 100Ω), VCER - - - - - - - - 110V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 3V DC Collector Current, IC - - - - - - - - - - - . . . 400m A Total Power Dissipation (TS ≤ +85°C, Note 1), Ptot - - - - - - - . . . 5W Operating Junction Temperature, TJ - - - - - - - - - . . +175°C Storage Temperature Range, Tstg - - -...