NTE252 - Silicon Complementary Transistors

Product Overview

NTE

NTE252 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE252

Datasheet Details

Part number	NTE252
Manufacturer	NTE
File Size	26.19 KB
Description	Silicon Complementary Transistors
Datasheet	NTE252 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE252, NTE251. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE252 datasheet.

Product details

Description

The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low frequency switching applications.

Features

D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

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Published: Aug 15, 2016 |