NTE253 Datasheet Silicon Complementary Transistors

Manufacturer: NTE Electronics (defunct)

NTE253 silicon complementary transistors by NTE Electronics (defunct) - Datasheet Preview

Datasheet Details

Part number	NTE253
Manufacturer	NTE Electronics (defunct)
File Size	24.82 KB
Description	Silicon Complementary Transistors
Download	NTE253 Download (PDF)

General Description

: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.

Overview

NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power.

Key Features

D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built.
In Base.
Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.

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