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NTE253 Datasheet Silicon Complementary Transistors

Manufacturer: NTE Electronics (defunct)

Datasheet Details

Part number NTE253
Manufacturer NTE Electronics (defunct)
File Size 24.82 KB
Description Silicon Complementary Transistors
Download NTE253 Download (PDF)

General Description

: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.

Overview

NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power.

Key Features

  • D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built.
  • In Base.
  • Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.