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NTE254 - Silicon Complementary Transistors

Download the NTE254 datasheet PDF. This datasheet also covers the NTE253 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general purpose amplifier and low

speed switching applications.

Features

  • D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built.
  • In Base.
  • Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE253_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE254
Manufacturer NTE Electronics (defunct)
File Size 24.82 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE254 Datasheet

📁 Similar Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE2540 Silicon NPN Transistor
NTE2541 Silicon Complementary Transistors
NTE2542 Silicon Complementary Transistors
NTE2543 Silicon NPN Transistor
NTE2544 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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