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NTE2540 - Silicon NPN Transistor

Features

  • D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A) D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO.
  • 600V Collector Emitter Voltage, VCEO.
  • . . . 400V Emitter Base Voltage, VEBO.

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Datasheet Details

Part number NTE2540
Manufacturer NTE Electronics (defunct)
File Size 22.89 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE2540 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A) D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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