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NTE256 - Silicon NPN Transistor

Description

The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base Emitter speed

up diode.

This device is particularly suitable for use as an output stage in high power, fast switching applications.

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Datasheet Details

Part number NTE256
Manufacturer NTE Electronics (defunct)
File Size 24.48 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE256 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications. Absolute Maximum Ratings: Collector–Base Voltagte (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . .
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