Part NTE2633
Description Silicon Complementary Transistors
Category Transistor
Manufacturer NTE Electronics
Size 21.10 KB
NTE Electronics

NTE2633 Overview

Description

The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: D High Breakdown Voltage D Low Output Capacitance Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Symbol V(BR)CBO IC = 0.1mA V(BR)CEO IC = 10mA V(BR)CER IC = 10mA, RBE = 100Ω Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)EBO.

Key Features

  • D High Breakdown Voltage D Low Output Capacitance - TS is the temperature at the soldering point of the collector lead