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NTE270 - Silicon Complementary Transistors Darlington Power Amp / Switch

General Description

The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Key Features

  • D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number NTE270
Manufacturer NTE Electronics (defunct)
File Size 24.87 KB
Description Silicon Complementary Transistors Darlington Power Amp / Switch
Datasheet download datasheet NTE270 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .