NTE2708 datasheet by NTE Electronics (defunct).
| Part number | NTE2708 |
|---|---|
| Datasheet | NTE2708_NTEElectronics.pdf |
| File Size | 30.80 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | Integrated Circuit NMOS / 8K UV EPROM / 450ns |
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The NTE2708 is an ultra violet light erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8 bit length. This device is fabricated using N channel silicon gate technology for high speed and simple interface with MOS and bipolar circuits.
View all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
| NTE270 | Silicon Complementary Transistors Darlington Power Amp / Switch |
| NTE27 | Germanium PNP Transistor High Current / High Gain Amp |
| NTE271 | Silicon Complementary Transistors |
| NTE2716 | Integrated Circuit NMOS / 16K UV Erasable PROM |
| NTE272 | Silicon Darlington Complementary Power Amplifiers |
| NTE273 | Silicon Darlington Complementary |
| NTE2732A | Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM |
| NTE274 | Silicon Complementary Transistors Darlington Power Amplifier / Switch |
| NTE275 | Silicon Complementary Transistors |
| NTE2764 | 64K Erasable EPROM |
