NTE272 - Silicon Darlington Complementary Power Amplifiers

Product Overview

NTE

NTE272 Silicon Darlington Complementary Power Amplifiers by NTE - Datasheet Preview — Datasheet preview – NTE272

Datasheet Details

Part number	NTE272
Manufacturer	NTE
File Size	22.39 KB
Description	Silicon Darlington Complementary Power Amplifiers
Datasheet	NTE272 Datasheet
Additional preview pages of the NTE272 datasheet.

Product details

Description

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Features

D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector.
Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector.
Emitter Voltage (Note 2), VCEO.
. 40V Collector.
Emitter Voltage, VCES.

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Other Datasheets by NTE

NTE27 - Germanium PNP Transistor High Current / High Gain Amp
NTE270 - Silicon Complementary Transistors Darlington Power Amp / Switch
NTE2708 - Integrated Circuit NMOS / 8K UV EPROM / 450ns
NTE271 - Silicon Complementary Transistors
NTE2716 - Integrated Circuit NMOS / 16K UV Erasable PROM
NTE273 - Silicon Darlington Complementary

Published: May 9, 2005 |