Datasheet4U Logo Datasheet4U.com

NTE272 - Silicon Darlington Complementary Power Amplifiers

Datasheet Summary

Description

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Features

  • D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector.
  • Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector.
  • Emitter Voltage (Note 2), VCEO.
  • . 40V Collector.
  • Emitter Voltage, VCES.

📥 Download Datasheet

Datasheet preview – NTE272

Datasheet Details

Part number NTE272
Manufacturer NTE
File Size 22.39 KB
Description Silicon Darlington Complementary Power Amplifiers
Datasheet download datasheet NTE272 Datasheet
Additional preview pages of the NTE272 datasheet.

📁 Similar Datasheet

  • NTE276 - Silicon Controlled Rectifier (NTE Electronics)
  • NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
  • NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
  • NTE2393 - N-Channel MOSFET (INCHANGE)
  • NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
  • NTE2662 - Silicon NPN Transistor High Frequency (NTE Electronics)
  • NTE2665 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
Other Datasheets by NTE
  • NTE27 - Germanium PNP Transistor High Current / High Gain Amp
  • NTE270 - Silicon Complementary Transistors Darlington Power Amp / Switch
  • NTE2708 - Integrated Circuit NMOS / 8K UV EPROM / 450ns
  • NTE271 - Silicon Complementary Transistors
  • NTE2716 - Integrated Circuit NMOS / 16K UV Erasable PROM
  • NTE273 - Silicon Darlington Complementary
  • NTE2732A - Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM
  • NTE274 - Silicon Complementary Transistors Darlington Power Amplifier / Switch

Full PDF Text Transcription

Click to expand full text
NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector–Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |