Datasheet4U.com

NTE2V010

Manufacturer: NTE Electronics (defunct)

NTE2V010 datasheet by NTE Electronics (defunct).

NTE2V010 datasheet preview

NTE2V010 Datasheet Details

Part number	NTE2V010
Datasheet	NTE2V010_NTEElectronics.pdf
File Size	27.75 KB
Manufacturer	NTE Electronics (defunct)
Description	Metal Oxide Varistors

NTE2V010 Overview

The NTE Metal Oxide Varistors.

NTE2V010 Key Features

up to 6500A D Fast Response Time
less than 35ns D Excellent Voltage Clamping Characteristics D Very Low Temperature Coefficient D Low Standby Current
40° to +85°C Storage Temperature
40° to +125°C Response Time
less than 35ns Voltage Temperature Coefficient
less than 0.05%/°C Non-Linear Exponent NTE1V010 to NTE1V075, NTE2V010 to NTE2V075
greater than 40 Maximum Leakage Current

More Datasheets from NTE Electronics (defunct)

View all NTE Electronics (defunct) datasheets

Part Number	Description
NTE20	Silicon Complementary Transistors High Power / Low Collector Saturation Voltage Power Output
NTE2003	Integrated Circuit Dolby B-Type Noise Reduction Processor
NTE2004	Integrated Circuit Dolby Noise Reduction Circuit
NTE2011	Integrated Circuit 7-Channel Darlington Array/Driver
NTE2012	Integrated Circuit 7-Channel Darlington Array/Driver
NTE2013	Integrated Circuit 7-Channel Darlington Array/Driver
NTE2014	Integrated Circuit 7-Channel Darlington Array/Driver
NTE2015	Integrated Circuit 7-Channel Darlington Array/Driver
NTE2016	Integrated Circuit 8-Channel Darlington Array/Driver
NTE2017	Integrated Circuit 8-Channel Darlington Array/Driver

NTE2V010 Distributor