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NTE3040 - Optoisolator NPN Transistor

Description

The NTE3040 is a gallium arsenide, infrared emitting diode in a 6

Lead DIP type package coupled with a silicon phototransistor.

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Datasheet Details

Part number NTE3040
Manufacturer NTE Electronics (defunct)
File Size 20.64 KB
Description Optoisolator NPN Transistor
Datasheet download datasheet NTE3040 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor. Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Infrared Emitting Diode Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/°C Forward Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Forward Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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