• Part: NTE311
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 21.00 KB
Download NTE311 Datasheet PDF
NTE Electronics
NTE311
NTE311 is Silicon NPN Transistor manufactured by NTE Electronics.
NTE311 Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 30V Collectore- Base Voltage, VCBO - - - - - - - - - - . . . . 55V Emitter- Base Voltage, VEBO - - - - - - - - - - - . 3.5V Continuous Collector Current, IC - - - - - - - - - - 400m A Total Device Dissipation (TC = +25°C), PD - - - - - - - - - 5W Derate Above 25°C - - - - - - - - - - . . 28.6m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector- Emitter Breakdown Voltage Collector- Emitter Sustaining Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current VCER(sus) IC = 5m A, RBE = 10Ω VCEO(sus) IC = 5m A, IB = 0 V(BR)EBO ICEO ICEX Emitter Cutoff Current ON Characteristics DC Current Gain Collector- Emitter Saturation Voltage Small- Signal Characteristics Current- Gain Bandwidth Product Output Capacitance Functional Test Amplifier Power Gain Collector Efficiency Gpe h VCC = 28V, POUT = 1W, f = 400MHz VCC = 20V, POUT = 1W, f = 400MHz 10 45 - -...