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NTE313 - Silicon NPN Transistor

General Description

The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications.

Key Features

  • high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • 30V Collector.
  • Emitter Voltage, VCEO.
  • . . . . 30V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number NTE313
Manufacturer NTE Electronics (defunct)
File Size 18.65 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE313 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .