NTE313 Datasheet | NTE Electronics

Description : The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 30V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 30V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Collector Current, IC - - - - - - - - - - - - . . 20m A Total Power Dissipation, PT - - - - - - - - - - . . . . 150m W Maximum Junction Temperature, TJ - - - - - - - - - . . +150°C Storage Temperature Range, Tstg - - - - - - - - . . - 60° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise...