NTE316 Datasheet | NTE Electronics

Features : D High Current Gain- Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 15V Collector- Base Voltage, VCBO - - - - - - - - - - - 30V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 3V Continuous Collector Current, IC - - - - - - - - - - . 50m A Total Continuous Device Dissipation (TA = +25°C), PD - - - - - - 200m W Derate Above 25°C - - - - - - - - - - . . 1.14m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector- Emitter Breakdown Voltage Collector- Base Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Current Gain- Bandwidth Product Collector- Base Capacitance Small- Signal Current Gain Collector- Base Time Constant Noise Figure Functional Test mon- Emitter Amplifier Power Gain Gpe VCE = 5V, IC = 2m A, f = 450MHz 15 - - d B f T Ccb hfe rb ’Cc NF VCE = 5V, IC = 10m A, f = 100MHz VCB = 10V, IE = 0, f = 1k Hz VCE = 5V, IC = 2m A, f = 1k Hz VCE = 5V, IE = 2m A, f = 31.8MHz VCE = 5V, IC = 2m A, RS = 50Ω, f = 450MHz 1400 - 25...